Spin relaxation of conduction electrons in bulk III-V semiconductors
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Abstract
The spin relaxation time of conduction electrons through the Elliot-Yafet, Dyakonov-Perel, and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs, and InSb of both n and p type. The relative importance of each spin relaxation mechanism is compared, and diagrams showing the dominant mechanism are constructed as a function of the temperature and impurity concentration. Our approach is based upon theoretical calculations of the momentum relaxation rate, and allows one to understand the interplay between various factors affecting the spin relaxation over a broad range of temperature and impurity concentration.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Spin relaxation of conduction electrons in bulk III-V semiconductors</title><author><name sortKey="Song, Pil Hun" uniqKey="Song P">Pil Hun Song</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, North Carolina State University, Raleigh</wicri:cityArea></affiliation></author><author><name sortKey="Kim, K W" uniqKey="Kim K">K. W. Kim</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, North Carolina State University, Raleigh</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0409965</idno><date when="2002-07-15">2002-07-15</date><idno type="stanalyst">PASCAL 02-0409965 AIP</idno><idno type="RBID">Pascal:02-0409965</idno><idno type="wicri:Area/Main/Corpus">00EC51</idno><idno type="wicri:Area/Main/Repository">00E008</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron spin-lattice relaxation</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Spin-spin relaxation</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7225R</term><term>7620</term><term>7660E</term><term>Etude théorique</term><term>Gallium arséniure</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Relaxation spin électronique réseau</term><term>Relaxation spin spin</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The spin relaxation time of conduction electrons through the Elliot-Yafet, Dyakonov-Perel, and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs, and InSb of both n and p type. The relative importance of each spin relaxation mechanism is compared, and diagrams showing the dominant mechanism are constructed as a function of the temperature and impurity concentration. Our approach is based upon theoretical calculations of the momentum relaxation rate, and allows one to understand the interplay between various factors affecting the spin relaxation over a broad range of temperature and impurity concentration.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>66</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Spin relaxation of conduction electrons in bulk III-V semiconductors</s1></fA08><fA11 i1="01" i2="1"><s1>SONG (Pil Hun)</s1></fA11><fA11 i1="02" i2="1"><s1>KIM (K. W.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s2>035207-035207-8</s2></fA20><fA21><s1>2002-07-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0409965</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The spin relaxation time of conduction electrons through the Elliot-Yafet, Dyakonov-Perel, and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs, and InSb of both n and p type. 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